CY7C1019DV33-10VXI High-speed SRAM, 1 Mb (128 K x 8), 3.3 V, 10ns, SOJ-32

High-Speed CMOS Static RAM 3,3V 128kx8 10ns SOJ-32

Functional Description The CY7C1019DV33 is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16). Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins. The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE LOW, and WE LOW). The CY7C1019DV33 is available in Pb-free 32-pin 400-Mil wide Molded SOJ, 32.

Features - Pin- and function-compatible with CY7C1019CV33 - High speed: taa = 10 ns - Low active power: Icc = 60 mA @ 10 ns - Low CMOS standby power: Isb2 = 3 mA - 2.0 V data retention - Automatic power-down when deselected - CMOS for optimum speed/power - Center power/ground pinout - Easy memory expansion with CE and OE options - Available in Pb-free 32-pin 400-Mil wide molded SOJ packages