20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 29 dBm (0.5 W) Power Amplifier

The ADPA7009CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 29 dBm saturated output power (0.5 W) distributed power amplifier that operates from 20 GHz to 54 GHz. The amplifier provides a gain of 19.5 dB, an output power for 1 dB compression (P1dB) of 28.5 dBm, and a typical output third-order intercept (IP3) of 35 dBm at 24 GHz to 36 GHz. The ADPA7009CHIP requires 750 mA from a 5 V supply voltage (VDD) and features inputs and outputs that are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the RFIN and RFOUT pads connected via one 0.076 mm (3 mil) ribbon bond of 0.076 mm (3 mil) minimal length.

APPLICATIONS

* Military and space

* Test instrumentation

* Satellite communications

* Output P1dB: 28.5 dBm typical at 24 GHz to 36 GHz

* PSAT: 29 dBm typical at 24 GHz to 36 GHz

* Gain: 19.5 dB typical at 24 GHz to 36 GHz

* Input return loss: 17.5 dB typical at 24 GHz to 36 GHz