IDW12G65C5 SiC Schottky diode, 650V, 12A, TO247

5th generation thinQ!™ SiC Schottky diode

The 5th generation ThinQ!™ represents Infineon's leading edge technology for SiC Schottky barrier diodes. Infineon's proprietary diffusion soldering process already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new product family with improved efficiency over all load conditions, due both to the improved thermal properties and a lower power value (Qc x Vf). The new thinQ!™ Generation 5 has been developed to complement the 650V CoolMOS™ families: This ensures that the highest application requirements in this voltage range are met.

Features

- revolutionary semiconductor material - silicon carbide - excellent switching behaviour - no backward recovery / no forward recovery - positive temperature coefficient - high surge current resistance - lead-free lead; RoHS compliant - qualified according to JEDEC

- Breakdown voltage tested at 11 mA2) - optimized for high temperature operation

Advantages

- improvement of system efficiency compared to Si diodes - System cost/size savings through reduced cooling requirements - enables solutions with higher frequency / increased power density - higher system reliability due to lower operating temperatures - reduced EMI

Applications

- Switching power supplies - Power factor correction - Solar inverter - uninterrupted power supplies