TSAL6200 Infrared diode, GaAlAs, 940 nm, 34°, 5 mm, T-1 3/4

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Description TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded in a blue-gray plastic package.

Features: - Package type: leaded - Package form: T-1¾ - Dimensions (in mm): Ø 5 - Peak wavelength: ?p = 940 nm - High reliability - High radiant power - High radiant intensity - Angle of half intensity: ? = ± 17° - Low forward voltage - Suitable for high pulse current operation - Good spectral matching with Si photodetectors

Applications: - Infrared remote control units with high power requirements - Free air transmission systems - Infrared source for optical counters and card readers