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IKW30N65H5XKSA1 IGBT transistor, N-channel, 650 V, 55 A, 188 W, TO-247-3

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IKW30N65H5XKSA1 IGBT transistor, N-channel, 650 V, 55 A, 188 W, TO-247-3 RSS 4.39 4.39 EUR18.73 PLN
  • Sklep zagraniczny
MPN:
IKW30N65H5XKSA1
Kod:
279652
Producent:
Infineon
Obudowa:
TO-247-3
GTIN-13:
9900002796523
Waluta:
euro
Dodany do bazy:
Ostatnio widziany:
Zmiana ceny:
+42% (05.04.2025)
Poprzednia cena:
3.09 EUR

IKW30N65H5 650V High speed DuoPack IGBT and Diode : IGBT in TRENCHSTOP™ 5 technology copacked with RAPID 1 fast and soft antiparallel diode

Features and Benefits: - High speed H5 TRENCHSTOP™ technology offering - Best-in-Class efficiency in hard switching and resonant topologies - Plug and play replacement of previous generation IGBTs - 650V breakdown voltage - Low gate charge QG - IGBT copacked with RAPID 1 fast and soft antiparallel diode - maximum junction temperature 175°C - qualified according to JEDEC for target applications - Pb-free lead plating, halogen-free mould compound, RoHS compliant - Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

Applications: - Solar converters - uninterruptible power supplies - welding converters - Mid to high range switching frequency converters

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