IKP10N60TXKSA1 IGBT transistor, N-channel, 600 V, 24 A, 110 W, TO-220

Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Features: - Very low VCE(sat) 1.5V (typ.) - Maximum Junction Temperature 175°C - Short circuit withstand time 5?s - Designed for : - Variable Speed Drive for washing machines, air conditioners and induction cooking - Uninterrupted Power Supply - TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) - Low EMI - Low Gate Charge - Very soft, fast recovery anti-parallel Emitter Controlled HE diode - Qualified according to JEDEC1 for target applications - Pb-free lead plating; RoHS compliant - Complete product spectrum and PSpice Models : http://www.infineon.com/igbt