1 C Charge Injection, 100 A Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch

The ADG636 is a monolithic device, comprising two indepen-dently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions.

The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7 V to +5.5 V.

This switch offers ultralow charge injection of ±1.5 pC over the entire signal range and leakage current of 10 pA typical at 25°C. In addition, it offers on resistance of 85 Ω typical, which is matched to within 2 Ω between channels. The ADG636 also has low power dissipation yet is capable of high switching speeds.

The ADG636 exhibits break-before-make switching action and is available in a 14-lead TSSOP package.

Product Highlights

* Ultralow charge injection. QINJ: ±1.5 pC typical over the full signal range

* Leakage current <0.25 nA maximum at 85°C

* Dual ±2.7 V to ±5 V or single +2.7 V to +5.5 V supply

* Automotive temperature range: −40°C to +125°C

* Small 14-lead TSSOP package

Applications

* Automatic test equipment

* Data acquisition systems

* Battery-powered instruments

* Communication systems

* Sample-and-hold systems

* Remote-powered equipment

* Audio and video signal routing

* Relay replacement

* Avionics

* 1 pC Charge Injection * ±2.7 V to ±5.5 V Dual Supply * +2.7 V to +5.5 V Single Supply * Automotive Temperature Range: –40°C to +125°C * 100 pA (Maximum @ 25°C) Leakage Currents