MASTERGAN3 GaN H-bridge, 600 V, 6.5/4 A, 0.225/0.45 Ohm ,QFN-31

The MASTERGAN3 is an advanced power system-in-package that integrates a gate driver and two enhancement-mode GaN transistors in an asymmetrical half-bridge configuration. The integrated GaN power transistors have a drain-source blocking voltage of 650 V and an RDS(ON) of 225 mOhm and 450 mOhm for the low and high sides, respectively.The high side of the embedded gate driver can be easily powered by the integrated bootstrap diode.The high side of the embedded gate driver can be easily powered by the integrated bootstrap diode. The MASTERGAN3 has UVLO protection for both the low and high driver sections, preventing the circuit breakers from operating at low efficiency or under hazardous conditions, and the latching function prevents cross-circuits.

Technical Features