MASTERGAN4 GaN H-bridge, 600 V, 4 A, 0.225 Ohm ,QFN-31

The MASTERGAN4 is an advanced power system-in-package that includes a gate driver and two enhancement-mode GaN power transistors in half-bridge Configuration. The integrated power GaNs have a drain-source blocking voltage of 650 V and an RDS(ON) of 225 mOhm, while the high side of the integrated gate driver is can be powered by the integrated bootstrap diode. The MASTERGAN4 has UVLO protection for both the lower and upper of the lower and upper driver sections to prevent the circuit breakers from operating in low efficiency or hazardous conditions, and the latching function avoids cross-circuits.

Technical data