MASTERGAN2 GaN H-bridge, 600 V, 10/6.5 A, 0.15/0.225 Ohm,QFN-31

The MASTERGAN2 is an advanced power system-in-package that integrates a gate driver and two GaN (enhancement type) transistors in a half-bridge configuration. The integrated GaN power transistors have a drain-source blocking voltage of 650 V and an RDS(ON) of 150 mOhm and 225 mOhm for the low and high sides, respectively, while the high side of the integrated gate driver can be easily powered by the integrated bootstrap diode. The MASTERGAN2 has UVLO protection in both the low and high driver sections to prevent the circuit breakers from operating in low efficiency or hazardous conditions, and the interlock function avoids cross-circuits.

Technical features