20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 29 dBm (0.5 W) Power Amplifier

The ADPA7009-2 is a gallium arsenide (GaAs), pseudomorphic high-electron-mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 0.5 W power amplifier with an integrated temperature-compensated, on-chip power detector that operates between 20 GHz and 54 GHz. The amplifier provides a gain of 17.5 dB, an output power for 1 dB compression (OP1dB) of 28 dBm, and a typical output third-order intercept (OIP3) of 34.5 dBm at 20 GHz to 35 GHz. The ADPA7009-2 requires 850 mA from a 5 V supply voltage (VDDx). The RF input and outputs are internally matched and DC-blocked for ease of integration into higher level assemblies. Most of the typically required external passive components for operation (AC coupling capacitors and power supply decoupling capacitors) are integrated, which facilitates a small, compact printed circuit board (PCB) footprint. The ADPA7009-2 is available in a 5.00 mm × 5.00 mm, 24-terminal chip array, small outline, no lead cavity [LGACAV] package.

APPLICATIONS

* Military and space

* Test instrumentation

* Integrated power-supply capacitors and bias inductors

* Integrated AC coupling capacitors

* Gain: 17.5 dB typical at 20 GHz to 35 GHz

* Input return loss: 14 dB typical at 20 GHz to 35 GHz

* Output return loss: 15 dB typical at 20 GHz to 35 GHz

* OP1dB: 28 dBm typical at 20 GHz to 35 GHz