MSC025SMA120B4

Our mSiC MOSFETs enable high-efficiency and robust performance in demanding, high-voltage applications. Leveraging over 20 years of silicon carbide (SiC) experience, these SiC MOSFETs are designed to maximize system efficiency while significantly reducing system weight and size.

The MSC025SMA120B4 is part of our MA Family of mSiC MOSFETs. This 1200V SiC MOSFET uses a gate drive voltage of 18-20V to ensure reliable switching performance with a low RDS(on) of 25 mOhms, minimizing conduction losses and enhancing overall system efficiency. This device is suitable for high-power applications, capable of handling continuous drain currents of 113A. With maximum ratings reaching up to 175°C, SiC MOSFETs can operate at elevated junction temperatures to provide superior thermal performance and reliability in harsh environments.

TO-247-4 packages are engineered to deliver exceptional power efficiency and thermal management in high-performance applications. The TO-247-4 package features an innovative four-lead design, which includes a Kelvin source connection that significantly reduces gate ringing and switching losses. These SiC MOSFETs provide superior switching performance, reduced conduction losses, and higher thermal conductivity compared to traditional silicon-based MOSFETs.