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STGSH80HB65DAG Automotive-grade ACEPACK SMIT half-bridge topology 650 V, 80 A HB series IGBT with diode

STMicroelectronics

STGSH80HB65DAG Automotive-grade ACEPACK SMIT half-bridge topology 650 V, 80 A HB series IGBT with diode RSS 19.02 19.02 USD77.27 PLN
  • Sklep zagraniczny
MPN:
STGSH80HB65DAG
Producent:
STMicroelectronics
Waluta:
dolar amerykański
Dodany do bazy:
Ostatnio widziany:
Zmiana ceny:
-1.76% (05.02.2026)
Poprzednia cena:
19.36 USD
Ilość [ x szt]: 10+ 100+
Cena USD [za szt]: 13.60 12.18

This device combines two IGBTs and diodes in half-bridge topology mounted on a very compact and rugged easily surface-mounted package. The device is part of the HB series IGBTs, which is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included in every switch. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching applications.

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