EVSTDRIVEG60015 Demonstration board for STDRIVEG600 600 V high speed half-bridge gate driver with 75mΩ, 650 V e-mode GaN HEMT

The STDRIVEG600 is a high-speed half-bridge gate driver optimized to drive high-voltage enhanced mode GaN HEMTs.

It features separated high current sink/source gate driving pins, an integrated bootstrap diode, overtemperature, and allows supplying external switches up to 20 V, with undervoltage protection tailored for GaN HEMTs.

The EVSTDRIVEG60015 board is easy to use and quick and adapt for evaluating the characteristics of STDRIVEG600 driving 75 mΩ typ., 650 V E-Mode GaN switches.

It provides an on-board programmable dead time generator and a 3.3 V linear voltage regulator to supply external logic controllers like microcontrollers.

Spare footprints are also included to allow customizing the board for the final application, such as separate LIN and HIN input signals or single PWM signal, use of optional external bootstrap diode, separate supply for VCC, PVCC or BOOT and the use of low-side shunt resistor for peak current mode topologies.

The EVSTDRIVEG60015 is 50 x 70 mm wide, FR-4 PCB resulting in 25 °C/W Rth(J‑A) in still air.