MASTERGAN1LTR 600 V half-bridge enhancement mode GaN HEMT with high voltage driver
STMicroelectronics
- Darmowa próbka
- MPN:
- MASTERGAN1LTR
- Producent:
- STMicroelectronics
- Dodany do bazy:
- Ostatnio widziany:
- Zmiana ceny:
- -2.64% (25.10.2025)
- Poprzednia cena:
- 7.19
| Ilość [ x szt]: | 10+ | 25+ | 100+ | 250+ | 500+ |
|---|---|---|---|---|---|
| Cena USD [za szt]: | 5.40 | 5.01 | 4.57 | 4.35 | 4.22 |
Sugerowane produkty dla mastergan1l
The MASTERGAN1L is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration.
The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
The MASTERGAN1L features UVLO protection on VCC, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.
The input pins extended range allows easy interfacing with analog controllers, microcontrollers and DSP units.
The MASTERGAN1L operates in the industrial temperature range, -40°C to 125°C.
The device is available in a compact 9x9 mm QFN package.
Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.
Produkt pochodzi z oferty sklepu STMicroelectronics