GaAs, pHEMT, MMIC, Low Noise Amplifier, 1 GHz to 22 GHz

The ADL8102 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 1 GHz to 22 GHz.

The ADL8102 provides a typical gain of 27 dB at 9 GHz to 19 GHz, a 2.5 dB typical noise figure from 9 GHz to 19 GHz, a typical output third-order intercept (OIP3) of 25 dBm at 1 GHz to 9 GHz, and a saturated output power (PSAT) of up to 15.5 dBm, which requires only 110 mA from a 5 V supply voltage. The ADL8102 also features inputs and outputs that are internally matched to 50 Ω. The RFIN and RFOUT pins are internally AC-coupled, and the bias inductor is also integrated, which makes it ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications.

The ADL8102 is housed in an RoHS-compliant, 3 mm × 3 mm, 16-lead LFCSP package.

APPLICATIONS

* Telecommunications

* Satellite communications

* Military radar

* Weather radar

* Civil radar

* Electronic warfare

* Single positive supply (self biased)* Gain: 27 dB typical at 9 GHz to 19 GHz* OP1dB: 13.5 dB typical at 1 GHz to 9 GHz