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STGD4H60DF Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package

STMicroelectronics

STGD4H60DF Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package RSS Sample
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MPN:
STGD4H60DF
Producent:
STMicroelectronics
Obudowa:
TO-252
Dodany do bazy:
Ostatnio widziany:
Zmiana ceny:
-7% (25.10.2025)
Poprzednia cena:
1.30
Ilość [ x szt]: 10+ 100+ 500+
Cena USD [za szt]: 0.76 0.50 0.40

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

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