RF-MOSFET-1000V

The ARF family of RF power MOSFETs is optimized for applications requiring frequencies as high as 150 MHz and operating voltages as high as 400V. Historically, RF power MOSFETs were limited to applications of 50V or less. This limitation has been removed by combining Microchip’s high-voltage MOSFET technology with RF-specific die geometries.

The DRF1300 and DRF1301 have two independent channels, each containing a driver and RF MOSFET in a push-pull configuration. All DRF parts feature a proprietary anti-ring function to eliminate cross conduction in bridge or push-pull topologies. All DRF parts can be externally selected in either an inverting or non-inverting configuration.