APT100GT120JR

The APT100GT120JR is a 1200V discrete NPT (Non-Punch-Through) IGBT engineered for high-power, high-frequency applications. It's designed to support an impressive continuous collector current of up to 123A, with pulsed capabilities reaching 570A, and power dissipation up to 570W. Our device delivers a reliable VCE(on), helping reduce conduction losses in demanding conditions. We’ve also engineered it for fast, controlled switching with efficient gate drive design. With an operational junction temperature range from –55 °C up to 150 °C, this discrete IGBT is built for reliability in tough environments.