STDRIVEG611Q High voltage and high-speed half-bridge gate driver for GaN power switches
STMicroelectronics
- Darmowa próbka
- MPN:
- STDRIVEG611Q
- Producent:
- STMicroelectronics
- Dodany do bazy:
- Ostatnio widziany:
- Zmiana ceny:
- -33% (22.11.2025)
- Poprzednia cena:
- 4.42
| Ilość [ x szt]: | 10+ | 25+ | 100+ | 250+ | 500+ |
|---|---|---|---|---|---|
| Cena USD [za szt]: | 2.22 | 2.03 | 1.82 | 1.67 | 1.62 |
The STDRIVEG611 is a high-voltage half-bridge gate driver for N‑channel Enhancement Mode GaN.
The high-side driver section is designed to stand a voltage rail up to 600 V and can be easily supplied by the integrated bootstrap diode.
High current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG611 optimized for driving high-speed GaN.
The STDRIVEG611 features supply UVLOs tailored to hard switching applications, interlocking to avoid cross-conduction conditions and an overcurrent comparator with SmartSD.
The input pins extended range allows easy interfacing with controllers. A standby pin allows to reduce the power consumption during inactive periods or burst mode.
The STDRIVEG611 operates in the industrial temperature range, -40 °C to 125 °C.
The device is available in a compact QFN 4x5x1 mm package with 0.5 mm pitch.
Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.
Produkt pochodzi z oferty sklepu STMicroelectronics