STDRIVEG610Q High voltage and high-speed half-bridge gate driver for GaN power switches

The STDRIVEG610 is a high-voltage half-bridge gate driver for N‑channel Enhancement Mode GaN.

The high-side driver section is designed to stand a voltage rail up to 600 V and can be easily supplied by the integrated bootstrap diode.

High current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG610 optimized for driving high-speed GaN.

The STDRIVEG610 features supply UVLOs tailored to fast startup and low-consumption soft-switching applications, but with full hard switching support and interlocking to avoid cross-conduction conditions. The high-side regulator is characterized by very short wake-up time to maximize the application efficiency during intermittent operation (burst mode).

The input pins extended range allows easy interfacing with controllers. A standby pin allows to reduce the power consumption during inactive periods or burst mode.

The STDRIVEG610 operates in the industrial temperature range, -40 °C to 125 °C.

The device is available in a compact QFN 4x5x1 mm package with 0.5 mm pitch.