STDRIVEG610QTR High voltage and high-speed half-bridge gate driver for GaN power switches
STMicroelectronics
- Darmowa próbka
- MPN:
- STDRIVEG610QTR
- Producent:
- STMicroelectronics
- Dodany do bazy:
- Ostatnio widziany:
- Zmiana ceny:
- -2.64% (22.11.2025)
- Poprzednia cena:
- 3.03
| Ilość [ x szt]: | 10+ | 25+ |
|---|---|---|
| Cena USD [za szt]: | 2.22 | 2.03 |
Sugerowane produkty dla stdriveg610
The STDRIVEG610 is a high-voltage half-bridge gate driver for N‑channel Enhancement Mode GaN.
The high-side driver section is designed to stand a voltage rail up to 600 V and can be easily supplied by the integrated bootstrap diode.
High current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG610 optimized for driving high-speed GaN.
The STDRIVEG610 features supply UVLOs tailored to fast startup and low-consumption soft-switching applications, but with full hard switching support and interlocking to avoid cross-conduction conditions. The high-side regulator is characterized by very short wake-up time to maximize the application efficiency during intermittent operation (burst mode).
The input pins extended range allows easy interfacing with controllers. A standby pin allows to reduce the power consumption during inactive periods or burst mode.
The STDRIVEG610 operates in the industrial temperature range, -40 °C to 125 °C.
The device is available in a compact QFN 4x5x1 mm package with 0.5 mm pitch.
Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.
Produkt pochodzi z oferty sklepu STMicroelectronics