EVLSTDRIVEG610Q Evaluation board for STDRIVEG610 600 V high-speed half-bridge gate driver with 75 mΩ, 650 V e-mode GaN HEMT

The STDRIVEG610 is a high-speed, half-bridge gate driver optimized to drive high-voltage, enhanced mode, GaN HEMTs.

It features separated high current sink/source gate driving pins, integrated LDOs, undervoltage, bootstrap diode, high-side fast startup, overtemperature, fault and shutdown pins, and standby to fully support hard switching topologies in a 4x5mm QFN package.

The EVLSTDRIVEG610Q board is easy to use and quick and adapt for evaluating the characteristics of the STDRIVEG610 driving 75 mΩ typ., 650 V e-mode GaN switches in the 5x6 mm QFN package. The EVLSTDRIVEG610Q board is also suitable for evaluating the STDRIVEG210 features.

It provides an onboard programmable deadtime generator and a 3.3 V linear voltage regulator to supply external logic like microcontrollers.

Spare footprints are also included to allow customizing the board for the final application, such as separate LIN and HIN input signals or single PWM signal.

The EVLSTDRIVEG610Q is 56 x 70 mm wide, 2 layers, 1.5 Oz, FR-4 PCB, resulting in overall 24 °C/W Rth(J‑A) (equivalent to 48 °C/W for each GaN) in still air to evaluate high power applications.