DC to 31 GHz, GaAs, pHEMT, 2 W Power Amplifier

The ADPA9007 is a 2 W, RF power amplifier that operates from DC to 31 GHz. The RF input and output are internally-matched and DC-coupled. The ADPA9007 includes an integrated temperature-compensated RF power detector and an integrated temperature sensor.

The ADPA9007 amplifier provides a gain of 12.5 dB, an output power for 1 dB compression (OP1dB) of 33 dBm, and an output third-order intercept (OIP3) of 45 dBm from 2 GHz to 16 GHz. The amplifier operates from a typical supply voltage of 15 V and has a 500 mA typical quiescent bias current, which is adjustable.

The ADPA9007 is fabricated on a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) process. The amplifier is housed in an RoHS-compliant, 32-Lead, 5 mm × 5 mm, lead frame chip scale package, premolded cavity [LFCSPCAV] and is specified for operation from −40°C to +85°C.

Applications

* Electronic warfare

* Radar

* Test and measurement equipment

* Wideband, internally-matched, RF power amplifier

* DC-coupled input and output

* Integrated RF power detector

* Integrated temperature sensor

* Gain: 12.5 dB typical at 2 GHz to 16 GHz