ADH8412S: Low Noise Amplifier, 0.4 GHz to 11 GHz

The ADH8412S-CSL is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.4 GHz to 11 GHz.

The ADH8412S-CSL provides a typical gain of 15.5 dB, a 1.4 dB typical noise figure, and a typical output third-order intercept (OIP3) of ≤33 dBm, requiring only 60 mA from a 5 V drain supply voltage. The saturated output power (PSAT) of ≤20.5 dBm typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many Analog Devices, Inc., balanced, in-phase and quadrature (I/Q), or image rejection mixers.

The ADH8412S-CSL also features inputs and outputs that are internally matched to 50 Ω, making the device ideal for surface-mount technology (SMT)-based, space applications. The ADH8412S-CSL is housed in a 2 mm × 2 mm, 6-lead lead frame chip scale package (LFCSP).

Additional application and technical information can be found in the Commercial Space Products Program brochure and HMC8412 data sheet.

APPLICATIONS

* Low and medium Earth orbit (LEO/MEO) satellites

* Avionics

* Test instrumentation

* Telecommunications

* Military radar and communication

* Electronic warfare

* Aerospace

* Low noise figure: 1.4 dB typical at 0.4 GHz to 3 GHz

* Single positive supply (self biased)

* High gain: ≤15.5 dB typical

* High OIP3: ≤33 dBm typical

* RoHS compliant, 2 mm × 2 mm, 6-lead LFCSP