2N3439P-Transistor-PIND

This specification covers the performance requirements for NPN, silicon, low-power, high voltage 2N3439, 2N3439L, 2N3439UA, 2N3439U4, 2N3439UB, 2N3440, 2N3440L, 2N3440UA, 2N3440U4 and 2N3440UB transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device types as specified in MIL-PRF-19500/368 and two levels of product assurance (JANHC and JANKC) for each unencapsulated device type die. RHA level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices, which have passed RHA requirements. The device package for the encapsulated device type are as follows: Three terminal round metal can modified TO-205AA (formerly similar to TO-5) and modified TO-205-AD (formerly similar to TO-39) , surface mount version (UA) and surface mount version (U4) and surface mount version (UB, UBC). The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/368.