1214GN-1200VG-Power-Transistor

The 1214GN-1200VG is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16.3dB gain, 53% drain efficiency, 1200 Watts of pulsed RF output power at 300μs pulse width, 10% duty factor across the 1200 to 1400 MHz band. The transistor has internal pre-match for optimal performance. This transistor is ideal for use in L-band pulsed primary radar output stages. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.