MSC025SMA330D/S

Our mSiC MOSFETs enable high-efficiency and robust performance in demanding, high-voltage applications. Leveraging over 20 years of silicon carbide (SiC) experience, these SiC MOSFETs are designed to maximize system efficiency while significantly reducing system weight and size.

The MSC025SMA330D/S is part of our MA Family of mSiC MOSFETs. This 3300V (3.3 kV) SiC MOSFET uses a gate drive voltage of 18-20V to ensure reliable switching performance with a low RDS(on) of 25 mOhms, minimizing conduction losses and enhancing overall system efficiency. This device is suitable for high-power applications, capable of handling continuous drain currents of 104A. With maximum ratings reaching up to 150°C, SiC MOSFETs can operate at elevated junction temperatures to provide superior thermal performance and reliability in harsh environments.

The SiC bare die MOSFETs offers system-level customization for highly efficient and compact advanced power electronics solutions. The compact design of the bare die package enables even higher power density, making it ideal for high-power, high-efficiency systems.