1N5819-Schottky-Diode

This 1A Schottky barrier diode family is metallurgically bonded and offers military grade qualifications for high-reliability applications on “1N” prefixed numbers (1N5817-1,1N5819-1 and 1N6761-1), CDLL5817, CDLL5818, CDLL5819 for packaged COTs and CD5817,CD5818,CD5819 for COTs die numbers and CDS5819 for JANS grade. This small diode is hermetically sealed with four levels of product assurance for each encapsulated device type, JAN, JANTX, JANTXV, JANS as specified in MIL-PRF-19500/586 and two levels of product assurance provided for each unencapsulated device type, JANHC, AND JANKC. The device packages for the encapsulated device types are as follows: Axial leaded DO-204AL (formerly DO-41) metal electrode leadless face (MELF) DO-213AB UR . Mil-PRF-19500/586 device specification covers switching Schottky types, 1N5817, 1N5817-1, 1N5819, 1N5819-1, 1N6761, 1N6761-1, with average rectifier output current (Io) of 3 Amps, working peak reverse voltage (Vrwm) of 20V to 100V, and maximum reverse leakage current (Ir) of 0.05mA to 0.10mA