1011GN-30EL-Power-Transistor

The 1011GN-30E/EL/EP is a 30 Watts, 50 Volts, 1030-1090 MHz, Earless Driver GaN Transistor. This 30 W device features 128μs, 10% signaling with 30W Pulsed Output Power, plus 32μS-2% Pulsing. Designed using Common Source, class AB devices, the product utilizes 50V Bias Voltage and offers a >60% efficiency across the frequency band. The transistor is available in an extremely compact size with 18.5 dB typical power gain and 0.3 dB typical gain flatness. Ideal for use in IFF, Mode-S, TCAS Avionics Secondary Radars. All gold metallization and eutectic die attach for highest reliability. 50Ω in/out lumped element, very small footprint, plug & play pallets available.