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STHU60N046DM9AG Automotive-grade N-channel 600 V, 37 mOhm typ., 54 A MDmesh DM9 Power MOSFET in an HU3PAK package

STMicroelectronics

RSS 9.23 9.23 USD37.50 PLN
  • Sklep zagraniczny
MPN:
STHU60N046DM9AG
Producent:
STMicroelectronics
Waluta:
dolar amerykański
Dodany do bazy:
Ostatnio widziany:
Zmiana ceny:
-11% (06.10.2025)
Poprzednia cena:
10.33 USD
Ilość [ x szt]: 10+ 100+
Cena USD [za szt]: 6.87 5.72

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The fast-recovery diode featuring very low recovery charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

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