STDRIVEG211Q 220 V high-speed half-bridge gate driver for GaN power switches
STMicroelectronics
- Darmowa próbka
- MPN:
- STDRIVEG211Q
- Producent:
- STMicroelectronics
- Dodany do bazy:
- Ostatnio widziany:
- Zmiana ceny:
- -34% (22.11.2025)
- Poprzednia cena:
- 3.94
| Ilość [ x szt]: | 10+ | 25+ | 100+ | 250+ | 490+ |
|---|---|---|---|---|---|
| Cena USD [za szt]: | 1.95 | 1.78 | 1.60 | 1.51 | 1.45 |
Sugerowane produkty dla stdriveg211q
The STDRIVEG211 is a high-voltage half-bridge gate driver for N‑channel Enhancement Mode GaN.
The high-side driver section is designed to stand a voltage rail up to 220 V and can be easily supplied by the integrated bootstrap diode.
High current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG211 optimized for driving high-speed GaN.
The STDRIVEG211 features supply UVLOs tailored to hard switching applications, interlocking to avoid cross-conduction conditions and an overcurrent comparator with SmartSD.
The input pins extended range allows easy interfacing with controllers. A standby pin allows to reduce the power consumption during inactive periods or burst mode.
The STDRIVEG211 operates in the industrial temperature range, -40 °C to 125 °C.
The device is available in a compact QFN 4x5x1 mm package with 0.5 mm pitch.
Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.
Produkt pochodzi z oferty sklepu STMicroelectronics