Radiation-hardened, QMLV 200-V half-bridge GaN gate driver

The TPS7H60x3-SP series of

radiation-hardness-assured (RHA) gallium nitride (GaN) field effect transistor (FET)

gate drivers is designed for high frequency, high efficiency applications. The

series consists of the TPS7H6003-SP (200V rating), TPS7H6013-SP (60V rating), and

the TPS7H6023-SP (22V rating). The drivers feature adjustable dead time capability,

small 30ns propagation delay, and 5.5ns high-side and low-side matching. These parts

also include internal high-side and low-side LDOs which ensure a drive voltage of 5V

regardless of supply voltage. The TPS7H60x3-SP drivers all have split-gate outputs,

providing flexibility to adjust the turn-on and turn-off strength of the outputs

independently.

The TPS7H60x3-SP drivers feature two

control input modes: independent input mode (IIM) and PWM mode. In IIM each of the

outputs is controlled by a dedicated input. In PWM mode, two complementary outputs

signals are generated from a single input and the user can adjust the dead time for

each edge.

The gate drivers also offer user

configurable input interlock in independent input mode as anti-shoot through

protection. Input interlock disallows turn-on of both outputs when both inputs are

on simultaneously. The user has the option to enable or disable this protection in

independent input mode, which allows the driver to be used in a number of different

converter configurations. The drivers can also be utilized for both half-bridge and

dual-low side converter applications.