144-Mbit DDR™II+ SRAM 2-word Burst Architecture ( 2.5 Cycle Read latency ) with ODT

The R1QEA4436RBG is a 4, 194, 304-word by 36-bit and the R1QEA4418RBG is a 8, 388, 608-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.