Isolated high current and high efficiency SiC/MOSFET/IGBT gate driver with internal galvanic isolation

NCV57001F is a variant of NCV57001 with reduced Soft- Turn-Off time suited to drive large SiC/MOSFET/IGBTs or power modules. NCV57001F is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, and soft turn-off at DESAT. NCV57001F accommodates both 5V and 3.3V signals on the input side and wide bias voltage range on the driver side including negative voltage capability. NCV57001F provides > 5 kVrms (UL1577 rating) galvanic isolation and > 1200 Viorm (working voltage) capabilities. NCV57001F is available in the wide-body SOIC-16 package with guaranteed 8 mm creepage distance between input and output to fulfill reinforced safety insulation requirements.