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Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L

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MPN:
NTH4L028N170M1
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Silicon Carbide (SiC) MOSFET new family, 1700V M1 planar EliteSiC MOSFET is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This EliteSiC family delivers optimum performance when driven with 20V gate drive but also works well with 18V gate drive.

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