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Silicon Carbide (SiC) JFET - EliteSiC, 7.1 mohm, 1200V, TO-247-4L

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The UF3N120007K4S is a 1200 V, 7.1mohm high-performance Gen 3 normally-on SiC JFET transistor. This device exhibits ultra-low on resistance (RDS(on)) in a TO-247-4L package, making it an ideal fit to address the challenging thermal constraints of solid-state circuit breakers and relay applications. Additionally, the JFET is a robust device technology capable of the high-energy switching required in circuit protection applications.

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