P-Channel Enhancement Mode Field Effect Transistor -60V, -0.12A, 10Ω

This P-Channel enhancement mode field effect transistors is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. The NDS0610 can be used, with a minimum of effort, in most applications requiring up to 120mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.