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N-Channel Digital FET 25V, 0.95A, 0.45Ω

onsemi

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MPN:
FDG313N
Producent:
onsemi
Dodany do bazy:
Ostatnio widziany:

This N-Channel enhancement mode field effect transistor is produced using onsemi's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.

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