P-Channel Enhancement Mode Field Effect Transistor -50V, -0.13A, 10Ω

This P-channel enhancement-mode MOSFET is produced using proprietary, high cell density, DMOS technology. This very high density process minimizes on-state resistance and to provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.