Integrated P-Channel PowerTrench^{® MOSFET and BJT -30V , -2.9A, 90mΩ}

This device is designed specifically as a single package solution for loadswitching in cellular handset and other ultra-portable applications. It features a 50 V NPN BJT and a 30 V P-ch Trench MOSFET in the space saving MicroFET 2x2 package that offers exceptional thermal performance for it's physical size and is well suited to linear mode applications.