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IGBT, Monolithic with Reverse Conducting Diode, 650 V, 40 A

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MPN:
NGTB40N65IHRT
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This Insulated Gate Bipolar Transistor (IGBT) features robust andcost effective Field Stop (FS2) trench construction with a monolithicRC Diode. It provides a cost effective Solution for applications wherediode losses are minimal. The IGBT is optimized for low conductionlosses (low VCEsat) and is well suited for resonant or soft switchingapplications.

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