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IGBT, Ultra Field stop - 1200V 40A, Low VCEsat

onsemi

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MPN:
NGTB40N120L3
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onsemi
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This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and provides superiorperformance in demanding switching applications, offering both low onstate voltage and minimal switching loss. The IGBT is well suited formotor driver applications. Incorporated into the device is a soft and fastco−packaged free wheeling diode with a low forward voltage.

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