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IGBT, 1200V 30A FS2 Low VCEsat

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MPN:
NGTB30N120L2
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This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor motor driver applications. Incorporated into the device is a soft andfast co−packaged free wheeling diode with a low forward voltage

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