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IGBT, Ultra Field Stop - 1200V 25A

onsemi

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MPN:
NGTB25N120FL3
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onsemi
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This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ulatra Field Stop Trench construction, and provides superiorperformance in demanding switching applications, offering both low onstate voltage and minimal switching loss. The IGBT is well suited forUPS and solar applications. Incorporated into the device is a soft andfast co−packaged free wheeling diode with a low forward voltage.

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