STPSC30G065WL 650 V, 30A High surge Silicon Carbide power Schottky diode

The SiC diode STPSC30G065, available in DO-247 LL with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Based on latest technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions. Using the latest design improvement of the “G” series of ST SiC diodes, as well as implemented tests in production, this diode is becoming the reference point in the combination of efficiency and application robustness to the application design.