MASTERGAN6TR 650 V enhancement mode GaN High power density half-bridge with high voltage driver

The MASTERGAN6 is an advanced power system-in-package integrating two enhancement mode GaN transistors in a half-bridge configuration driven by a high-voltage, high frequency gate driver.

The integrated power GaNs have typical RDS(ON) of 140 mΩ and 650 V drain source blocking voltage.

The MASTERGAN6 features linear regulators on both the lower and upper driving sections to optimize driving efficiency. The high side of the embedded gate driver can be supplied by the integrated bootstrap diode. The interlocking function avoids cross-conduction conditions.

The advanced driver section, thanks to small propagation delay, very short wake-up time, and short, minimum on-times, enables high frequency switching operation.

The extended range of input pins as well as the remote signaling pin (FLT) allow easy interfacing with controllers, microcontrollers, or DSP units. The standby pin allows to reduce the power consumption of the device during inactive periods.

The MASTERGAN6 operates in the industrial temperature range, -40 °C to 125 °C.

The device is available in a compact 9x9x1 mm QFN package.