100V, 20A, 21mΩ, REXFET-1 N-Channel Power MOSFET in μSO8-FL for Automotive

The RBA20N10EANS-5UA21 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 3x3 μSO8-FL package. The ultra-compact package is approximately 90% smaller than the traditional DPAK, helping reduce board space and enhance design flexibility. Additionally, it uses Wettable Flank leads that provide excellent solderability and support reliable optical inspection.

Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.