MSC020SMB120B4N

Our mSiC MOSFETs enable high-efficiency and robust performance in demanding, high-voltage applications. Leveraging over 20 years of silicon carbide (SiC) experience, these SiC MOSFETs are designed to maximize system efficiency while significantly reducing system weight and size.

MSC020SMB120B4N is part of our MB Family of mSiC MOSFETs and delivers an optimal balance of performance, reliability and cost-effectiveness. This 1200V SiC MOSFET is compatible with a VGS of 15V enabling easy design-in and reuse of existing drive circuits. With maximum ratings reaching up to 175°C, SiC MOSFETs can operate at elevated junction temperatures to provide superior thermal performance and reliability in harsh environments.

The TO-247-4 Notch package enables efficient, high-power designs with improved thermal performance and reduced parasitic effects. Its four-lead layout includes a Kelvin source for lower gate ringing and switching losses, while the Notch design enhances creepage distance for better high-voltage reliability.