Infineon IPW60R041C6FKSA1 MOSFET N-channel 481W TO 247

Infineon Technologies presents the IPW60R041C6FKSA1, a highly efficient MOSFET designed for robust performance in high-power applications. This N-channel MOSFET features a maximum power dissipation of 481W and is housed in a TO-247 package, making it ideal for high-current switching and amplification tasks. With its metal-oxide semiconductor structure, the IPW60R041C6 offers excellent thermal stability and efficient power handling. The device is well-suited for use in power supplies, motor drives, and inverter applications where reliability and efficiency are paramount. Additionally, its design allows for effective gating and fast switching, suitable for both depletion and saturation type operations, providing versatility in complex electronic systems.